High-mobility solution-processed amorphous indium zinc oxide/In ₂O₃ nanocrystal hybrid thin-film transistor

High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In ₂O₃ NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm²V^-1s^-1 and an on-off ratio of 10⁷ , which were obtained at 1 mol% In₂O ₃ NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.