TY - JOUR
T1 - High-entropy design in (Ba0.85Sr0.15)TiO3–Bi(Mg2/3Ta1/3)O3 ceramics with temperature-stable dielectric performance
AU - Zhu, Xinying
AU - Mei, Mingchen
AU - Wang, Dingxin
AU - Liu, Song
AU - Liu, Rui
AU - Kong, Xi
AU - Yang, Letao
AU - Huang, Houbing
N1 - Publisher Copyright:
© 2026 Elsevier Ltd and Techna Group S.r.l. All rights are reserved, including those for text and data mining, AI training, and similar technologies.
PY - 2026
Y1 - 2026
N2 - Ceramic capacitors with stable dielectric responses at elevated temperatures are of great importance for advanced electronic applications. In this study, high-entropy-engineered (Ba0.85Sr0.15)TiO3–Bi(Mg2/3Ta1/3)O3 solid solutions were developed to achieve broad-temperature dielectric stability. Among them, the composition with 25% and 30% Bi(Mg2/3Ta1/3)O3 exhibit excellent dielectric properties, exhibiting room-temperature relative dielectric constants of 663 and 680, and dielectric losses of 0.6% and 1.1%, respectively. Particularly, they meet the X9R and X10R specification and dielectric loss of ∼0.6%, with capacitance variation less than ±15% from −74 °C to 265 °C, satisfying the X9R. The composition with 30% Bi(Mg2/3Ta1/3)O3 shows the room-temperature dielectric constant of ∼680 and the dielectric loss of ∼1.1%, and showing TCC values within ±15% from −60 °C to 300 °C, which meets the X10R requirement. The improved dielectric temperature stability is associated with high-entropy-induced relaxor behavior together with enhanced high-temperature insulation characteristics, which jointly suppress dielectric loss and leakage current over a broad temperature range. These results demonstrate that high-entropy design is an effective route for developing high-performance temperature-stable dielectric materials for high-temperature capacitor applications.
AB - Ceramic capacitors with stable dielectric responses at elevated temperatures are of great importance for advanced electronic applications. In this study, high-entropy-engineered (Ba0.85Sr0.15)TiO3–Bi(Mg2/3Ta1/3)O3 solid solutions were developed to achieve broad-temperature dielectric stability. Among them, the composition with 25% and 30% Bi(Mg2/3Ta1/3)O3 exhibit excellent dielectric properties, exhibiting room-temperature relative dielectric constants of 663 and 680, and dielectric losses of 0.6% and 1.1%, respectively. Particularly, they meet the X9R and X10R specification and dielectric loss of ∼0.6%, with capacitance variation less than ±15% from −74 °C to 265 °C, satisfying the X9R. The composition with 30% Bi(Mg2/3Ta1/3)O3 shows the room-temperature dielectric constant of ∼680 and the dielectric loss of ∼1.1%, and showing TCC values within ±15% from −60 °C to 300 °C, which meets the X10R requirement. The improved dielectric temperature stability is associated with high-entropy-induced relaxor behavior together with enhanced high-temperature insulation characteristics, which jointly suppress dielectric loss and leakage current over a broad temperature range. These results demonstrate that high-entropy design is an effective route for developing high-performance temperature-stable dielectric materials for high-temperature capacitor applications.
KW - BaTiO
KW - Dielectric stability
KW - High-entropy
KW - Relaxors
UR - https://www.scopus.com/pages/publications/105046389674
U2 - 10.1016/j.ceramint.2026.08.009
DO - 10.1016/j.ceramint.2026.08.009
M3 - Article
AN - SCOPUS:105046389674
SN - 0272-8842
JO - Ceramics International
JF - Ceramics International
ER -