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Growth mechanism of CdS film prepared by chemical bath deposition

  • Xing Yu Peng
  • , Hong Wei Gu*
  • , Teng Zhang
  • , Fa Zhu Ding
  • , Fei Qu
  • , Hong Yan Wang
  • *此作品的通讯作者
  • CAS - Institute of Electrical Engineering
  • University of Chinese Academy of Sciences

科研成果: 期刊稿件文章同行评审

摘要

In this paper, sodium citrate was adopted as a complexing agent and ammonia merely served as pH adjustor to investigate the growth mechanism of CdS film. The growth rate, structural properties, surface morphology, microstructure, and optical properties of CdS films were studied by profilometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and spectrophotometer, respectively. The SEM images show that CdS films prepared with higher ammonia concentration have lower nucleation density on substrate. SEM and EDS results show that the formation of Cd(OH) 2 is not required in the growth of CdS film. As the ammonia concentration increases, the sites that previously adsorbed S2- are taken by OH- which leads to lower S2- density on substrate. CdS film forms through direct reaction of Cd2+ with the S2- which are adsorbed on the substrate. Lower S2- density on the substrate results in the decrease of particle density on the substrate. The as-deposited CdS films have relatively high-average transmittance (~80 %) in the wavelength range from 500 to 1,000 nm which makes them suitable to be used in solar cell.

源语言英语
页(从-至)324-329
页数6
期刊Rare Metals
33
3
DOI
出版状态已出版 - 6月 2014
已对外发布

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