TY - JOUR
T1 - Group-VA Doped ZnO Injection Layer for Bright and Efficient Perovskite Light-Emitting Diodes
AU - Yang, Xiaoyu
AU - Ji, Yongqiang
AU - Li, Qiuyang
AU - Zhong, Qixuan
AU - Li, Hong
AU - Lu, Zhangyuchang
AU - Chen, Hao Hsin
AU - Wang, Yanju
AU - Hu, An
AU - Li, Shunde
AU - Ma, Li
AU - Li, Le
AU - Zhang, Yuzhuo
AU - Chen, Yu
AU - Zhao, Lichen
AU - Wu, Jiang
AU - Wang, Xinqiang
AU - Lu, Changjun
AU - Zhu, Rui
N1 - Publisher Copyright:
© 2024 Wiley-VCH GmbH.
PY - 2025/1/15
Y1 - 2025/1/15
N2 - Heteroatom doping of the ZnO electron injection layer (EIL) is widely applied to the fabrication of high-performance quantum-dot and perovskite light-emitting diodes (PeLEDs), while group-VA atomic dopant is rarely studied. Here, VA bismuth (Bi) with strong metallicity is screened as a substitution dopant to regulate the colloid size, surface terminal, and defect density of the ZnO precursor. The as-fabricated Bi-doped ZnO (ZnBiO) EIL shows enhanced conductivity, passivated trap states, more n-type nature, and appropriate band alignment with FAPbI3 (FA: formamidinium), contributing to smooth injection paths with minimal transport losses. Promoted by inhibited hydroxyl terminations of ZnBiO, the FAPbI3 crystals grown into flat nanocylinder domains with higher crystallinity and area-thickness ratio, leading to a champion PeLED efficiency of 22.3%, a high near-infrared radiance of 684 W sr−1 m−2, and nearly an order of magnitude extended operational stability, which shows great promise of ZnBiO as the optimal EIL for various LED application scenarios beyond classical ZnMgO.
AB - Heteroatom doping of the ZnO electron injection layer (EIL) is widely applied to the fabrication of high-performance quantum-dot and perovskite light-emitting diodes (PeLEDs), while group-VA atomic dopant is rarely studied. Here, VA bismuth (Bi) with strong metallicity is screened as a substitution dopant to regulate the colloid size, surface terminal, and defect density of the ZnO precursor. The as-fabricated Bi-doped ZnO (ZnBiO) EIL shows enhanced conductivity, passivated trap states, more n-type nature, and appropriate band alignment with FAPbI3 (FA: formamidinium), contributing to smooth injection paths with minimal transport losses. Promoted by inhibited hydroxyl terminations of ZnBiO, the FAPbI3 crystals grown into flat nanocylinder domains with higher crystallinity and area-thickness ratio, leading to a champion PeLED efficiency of 22.3%, a high near-infrared radiance of 684 W sr−1 m−2, and nearly an order of magnitude extended operational stability, which shows great promise of ZnBiO as the optimal EIL for various LED application scenarios beyond classical ZnMgO.
KW - Bi-doped ZnO
KW - electron injection layer
KW - near-infrared emission
KW - perovskite LED
UR - https://www.scopus.com/pages/publications/85208589750
U2 - 10.1002/adfm.202413517
DO - 10.1002/adfm.202413517
M3 - Article
AN - SCOPUS:85208589750
SN - 1616-301X
VL - 35
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 3
M1 - 2413517
ER -