Graphene-Silicon Layered Structures on Single-Crystalline Ir(111) Thin Films

Yande Que; Yong Zhang; Yeliang Wang; Li Huang; Wenyan Xu; Jing Tao; Lijun Wu; Yimei Zhu; Kisslinger Kim; Michael Weinl; Matthias Schreck; Chengmin Shen; Shixuan Du; Yunqi Liu; H. J. Gao

doi:10.1002/admi.201400543

Graphene-Silicon Layered Structures on Single-Crystalline Ir(111) Thin Films

Yande Que
, Yong Zhang
, Yeliang Wang
, Li Huang
, Wenyan Xu
, Jing Tao
, Lijun Wu
, Yimei Zhu
, Kisslinger Kim
, Michael Weinl
, Matthias Schreck
, Chengmin Shen
, Shixuan Du
, Yunqi Liu
, H. J. Gao^*

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

11 引用（Scopus）

摘要

Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-based materials. Graphene-silicon layered structures are successfully constructed on Ir(111) thin films on Si substrates with an yttria-stabilized zirconia buffer layer via intercalation approach. Such heterolayered structures are compatible with the current Si-based microelectronic technique, showing high promise for applications in future micro- and nanoelectronic devices.

源语言	英语
文章编号	1400543
期刊	Advanced Materials Interfaces
卷	2
期	3
DOI	https://doi.org/10.1002/admi.201400543
出版状态	已出版 - 1 2月 2015
已对外发布	是

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title = "Graphene-Silicon Layered Structures on Single-Crystalline Ir(111) Thin Films",

abstract = "Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-based materials. Graphene-silicon layered structures are successfully constructed on Ir(111) thin films on Si substrates with an yttria-stabilized zirconia buffer layer via intercalation approach. Such heterolayered structures are compatible with the current Si-based microelectronic technique, showing high promise for applications in future micro- and nanoelectronic devices.",

keywords = "Ir(111), graphene-silicon, intercalation, layered structures, single-crystalline thin films",

author = "Yande Que and Yong Zhang and Yeliang Wang and Li Huang and Wenyan Xu and Jing Tao and Lijun Wu and Yimei Zhu and Kisslinger Kim and Michael Weinl and Matthias Schreck and Chengmin Shen and Shixuan Du and Yunqi Liu and Gao, \{H. J.\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2015",

month = feb,

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doi = "10.1002/admi.201400543",

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journal = "Advanced Materials Interfaces",

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T1 - Graphene-Silicon Layered Structures on Single-Crystalline Ir(111) Thin Films

AU - Que, Yande

AU - Zhang, Yong

AU - Wang, Yeliang

AU - Huang, Li

AU - Xu, Wenyan

AU - Tao, Jing

AU - Wu, Lijun

AU - Zhu, Yimei

AU - Kim, Kisslinger

AU - Weinl, Michael

AU - Schreck, Matthias

AU - Shen, Chengmin

AU - Du, Shixuan

AU - Liu, Yunqi

AU - Gao, H. J.

PY - 2015/2/1

Y1 - 2015/2/1

N2 - Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-based materials. Graphene-silicon layered structures are successfully constructed on Ir(111) thin films on Si substrates with an yttria-stabilized zirconia buffer layer via intercalation approach. Such heterolayered structures are compatible with the current Si-based microelectronic technique, showing high promise for applications in future micro- and nanoelectronic devices.

AB - Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-based materials. Graphene-silicon layered structures are successfully constructed on Ir(111) thin films on Si substrates with an yttria-stabilized zirconia buffer layer via intercalation approach. Such heterolayered structures are compatible with the current Si-based microelectronic technique, showing high promise for applications in future micro- and nanoelectronic devices.

KW - Ir(111)

KW - graphene-silicon

KW - intercalation

KW - layered structures

KW - single-crystalline thin films

UR - https://www.scopus.com/pages/publications/84938632819

U2 - 10.1002/admi.201400543

DO - 10.1002/admi.201400543

M3 - Article

AN - SCOPUS:84938632819

SN - 2196-7350

VL - 2

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 3

M1 - 1400543

ER -

Graphene-Silicon Layered Structures on Single-Crystalline Ir(111) Thin Films

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