Fully integrated Si:HfO₂Negative Capacitance 2D-2D WSe2/SnSe₂Subthermionic Tunnel FETs

We report the first experimental demonstration and performance characterization of a fully integrated negative capacitance (NC) WSe2/SnSe2 p-Type Tunnel FETs (TFETs), validating the use of NC as a technology booster to achieve a significantly improved sub-Thermionic electronic switch. A WSe2/SnSe2 TFET with sub-60 mV/dec subthreshold slope (SS) is employed as the baseline TFET and characterized by using internal metal as a gate. The universal boosting impact of an NC effect of silicondoped Hf02 on digital and analog performances of 2D/2D TFETs is reported. A sub-30 mV/dec point SS and 50 mV / dec average swing over 2.5 decades of current with Ion/Ioff> 104 at VD= 500 mV are reported. Moreover, the low-slope region and I60 figures of merit are extended by 1.5 orders of magnitude due to the internal voltage amplification of the NC. The NC area of the polarization characteristic of Si:Hf02 is extracted for all the investigated drain voltages based on the experimental data measured in DC mode. Importantly, the supply voltage is reduced by 0.3 V by NC to achieve the same output current, Ion. Our results fully demonstrate the combined merits of band-To-band-Tunneling in 2D/2D WSe2/SnSe2 heterostructure with NC as a universal performance booster for 2D Tunnel FETs, offering to future 2D platforms a path towards improved energy efficiency.