From positive to negative magnetoresistance in graphene with increasing disorder

Yang Bo Zhou; Bing Hong Han; Zhi Min Liao; Han Chun Wu; Da Peng Yu

doi:10.1063/1.3595681

From positive to negative magnetoresistance in graphene with increasing disorder

Yang Bo Zhou
, Bing Hong Han
, Zhi Min Liao^*
, Han Chun Wu
, Da Peng Yu

^*此作品的通讯作者

Peking University
Trinity College Dublin

科研成果: 期刊稿件 › 文章 › 同行评审

81 引用（Scopus）

摘要

Artificial disorder was introduced gradually into monolayer graphene by controlling Ga⁺ ion irradiation and the corresponding electronic transport properties regulated by gate voltage, source-drain voltage, temperature, and magnetic field were studied experimentally. An unsaturated positive magnetoresistance (MR) up to 100% at ∼5 T was observed in as-fabricated graphene, while there is significant negative MR in disordered graphene. This phenomenon was attributed to the monocrystalline breaking and crystallite-boundary scattering in disordered graphene.

源语言	英语
期刊论文编号	222502
期刊	Applied Physics Letters
卷	98
期	22
DOI	https://doi.org/10.1063/1.3595681
出版状态	已出版 - 30 5月 2011
已对外发布	是

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abstract = "Artificial disorder was introduced gradually into monolayer graphene by controlling Ga+ ion irradiation and the corresponding electronic transport properties regulated by gate voltage, source-drain voltage, temperature, and magnetic field were studied experimentally. An unsaturated positive magnetoresistance (MR) up to 100\% at ∼5 T was observed in as-fabricated graphene, while there is significant negative MR in disordered graphene. This phenomenon was attributed to the monocrystalline breaking and crystallite-boundary scattering in disordered graphene.",

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AU - Liao, Zhi Min

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AU - Yu, Da Peng

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From positive to negative magnetoresistance in graphene with increasing disorder

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