Formation of p-n-p junction with ionic liquid gate in graphene

Xin He; Ning Tang; Li Gao; Junxi Duan; Yuewei Zhang; Fangchao Lu; Fujun Xu; Xinqiang Wang; Xuelin Yang; Weikun Ge; Bo Shen

doi:10.1063/1.4870656

Formation of p-n-p junction with ionic liquid gate in graphene

Xin He
, Ning Tang^*
, Li Gao
, Junxi Duan
, Yuewei Zhang
, Fangchao Lu
, Fujun Xu
, Xinqiang Wang
, Xuelin Yang
, Weikun Ge
, Bo Shen

^*此作品的通讯作者

Peking University
Jiangsu University
Collaborative Innovation Center of Quantum Matter
Tsinghua University

科研成果: 期刊稿件 › 文章 › 同行评审

11 引用（Scopus）

摘要

Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.

源语言	英语
期刊论文编号	143102
期刊	Applied Physics Letters
卷	104
期	14
DOI	https://doi.org/10.1063/1.4870656
出版状态	已出版 - 7 4月 2014
已对外发布	是

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abstract = "Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.",

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AU - He, Xin

AU - Tang, Ning

AU - Gao, Li

AU - Duan, Junxi

AU - Zhang, Yuewei

AU - Lu, Fangchao

AU - Xu, Fujun

AU - Wang, Xinqiang

AU - Yang, Xuelin

AU - Ge, Weikun

AU - Shen, Bo

PY - 2014/4/7

Y1 - 2014/4/7

N2 - Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.

AB - Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.

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ER -

Formation of p-n-p junction with ionic liquid gate in graphene

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