Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting

Chi Xu; Mao Wang; Xiaodong Zhang; Ye Yuan; Shengqiang Zhou

doi:10.1016/j.nimb.2018.12.049

Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting

Chi Xu^*
, Mao Wang
, Xiaodong Zhang
, Ye Yuan
, Shengqiang Zhou

^*此作品的通讯作者

Helmholtz-Zentrum Dresden-Rossendorf
Technische Universität Dresden
School of Materials Science and Engineering, Harbin Institute of Technology
King Abdullah University of Science and Technology

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.

源语言	英语
页（从-至）	31-35
页数	5
期刊	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
卷	442
DOI	https://doi.org/10.1016/j.nimb.2018.12.049
出版状态	已出版 - 1 3月 2019
已对外发布	是

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title = "Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting",

abstract = "In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.",

keywords = "III-V compounds, Ion implantation, Pulsed laser melting, Thin film",

author = "Chi Xu and Mao Wang and Xiaodong Zhang and Ye Yuan and Shengqiang Zhou",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

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doi = "10.1016/j.nimb.2018.12.049",

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TY - JOUR

T1 - Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting

AU - Xu, Chi

AU - Wang, Mao

AU - Zhang, Xiaodong

AU - Yuan, Ye

AU - Zhou, Shengqiang

PY - 2019/3/1

Y1 - 2019/3/1

N2 - In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.

AB - In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.

KW - III-V compounds

KW - Ion implantation

KW - Pulsed laser melting

KW - Thin film

UR - https://www.scopus.com/pages/publications/85060076761

U2 - 10.1016/j.nimb.2018.12.049

DO - 10.1016/j.nimb.2018.12.049

M3 - Article

AN - SCOPUS:85060076761

SN - 0168-583X

VL - 442

SP - 31

EP - 35

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting

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