Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory

Changhyun Ko; Yeonbae Lee; Yabin Chen; Joonki Suh; Deyi Fu; Aslihan Suslu; Sangwook Lee; James David Clarkson; Hwan Sung Choe; Sefaatin Tongay; Ramamoorthy Ramesh; Junqiao Wu

doi:10.1002/adma.201504779

Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory

Changhyun Ko
, Yeonbae Lee
, Yabin Chen
, Joonki Suh
, Deyi Fu
, Aslihan Suslu
, Sangwook Lee
, James David Clarkson
, Hwan Sung Choe
, Sefaatin Tongay
, Ramamoorthy Ramesh
, Junqiao Wu^*

^*此作品的通讯作者

University of California at Berkeley
National University of Singapore
Arizona State University
Kyungpook National University
Lawrence Berkeley National Laboratory

科研成果: 期刊稿件 › 文章 › 同行评审

172 引用（Scopus）

摘要

Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.

源语言	英语
页（从-至）	2923-2930
页数	8
期刊	Advanced Materials
卷	28
期	15
DOI	https://doi.org/10.1002/adma.201504779
出版状态	已出版 - 20 4月 2016
已对外发布	是

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10.1002/adma.201504779

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@article{464d126f579046aba0865aea39166831,

title = "Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory",

abstract = "Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.",

keywords = "2D materials, ferroelectrics, field-effect transistors, nonvolatile memory, transition-metal dichalcogenides",

author = "Changhyun Ko and Yeonbae Lee and Yabin Chen and Joonki Suh and Deyi Fu and Aslihan Suslu and Sangwook Lee and Clarkson, \{James David\} and Choe, \{Hwan Sung\} and Sefaatin Tongay and Ramamoorthy Ramesh and Junqiao Wu",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2016",

month = apr,

day = "20",

doi = "10.1002/adma.201504779",

language = "English",

volume = "28",

pages = "2923--2930",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "15",

}

TY - JOUR

T1 - Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory

AU - Ko, Changhyun

AU - Lee, Yeonbae

AU - Chen, Yabin

AU - Suh, Joonki

AU - Fu, Deyi

AU - Suslu, Aslihan

AU - Lee, Sangwook

AU - Clarkson, James David

AU - Choe, Hwan Sung

AU - Tongay, Sefaatin

AU - Ramesh, Ramamoorthy

AU - Wu, Junqiao

PY - 2016/4/20

Y1 - 2016/4/20

N2 - Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.

AB - Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.

KW - 2D materials

KW - ferroelectrics

KW - field-effect transistors

KW - nonvolatile memory

KW - transition-metal dichalcogenides

UR - https://www.scopus.com/pages/publications/84976240174

U2 - 10.1002/adma.201504779

DO - 10.1002/adma.201504779

M3 - Article

AN - SCOPUS:84976240174

SN - 0935-9648

VL - 28

SP - 2923

EP - 2930

JO - Advanced Materials

JF - Advanced Materials

IS - 15

ER -

Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory

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