Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties

Yuan Huang; Fei Liu; Qiang Luo; Yuan Tian; Qiang Zou; Chen Li; Chengmin Shen; Shaozhi Deng; Changzhi Gu; Ningsheng Xu; Hongjun Gao

doi:10.1007/s12274-012-0273-7

Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties

Yuan Huang
, Fei Liu
, Qiang Luo
, Yuan Tian
, Qiang Zou
, Chen Li
, Chengmin Shen
, Shaozhi Deng
, Changzhi Gu
, Ningsheng Xu
, Hongjun Gao^*

^*此作品的通讯作者

Chinese Academy of Sciences
Sun Yat-Sen University

科研成果: 期刊稿件 › 文章 › 同行评审

15 引用（Scopus）

摘要

Large-area patterned boron carbide nanowires (B₄C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B₄C NWs is about 50 nm, with a mean length of 20 μm. The B₄C NWs have a single-crystal structure and conductivities around 5. 1 × 10^-2 Ω^-1·cm^-1. Field emission measurements of patterned B₄C NWs films show that their turn-on electric field is 2. 7 V/μm, lower than that of continuous B₄C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B₄C NWs are a promising candidate for flexible cold cathode materials.

源语言	英语
页（从-至）	896-902
页数	7
期刊	Nano Research
卷	5
期	12
DOI	https://doi.org/10.1007/s12274-012-0273-7
出版状态	已出版 - 12月 2012
已对外发布	是

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title = "Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties",

abstract = "Large-area patterned boron carbide nanowires (B4C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B4C NWs is about 50 nm, with a mean length of 20 μm. The B4C NWs have a single-crystal structure and conductivities around 5. 1 × 10-2 Ω-1·cm-1. Field emission measurements of patterned B4C NWs films show that their turn-on electric field is 2. 7 V/μm, lower than that of continuous B4C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B4C NWs are a promising candidate for flexible cold cathode materials.",

keywords = "Boron carbide nanowires, field emission properties, flexible, patterned",

author = "Yuan Huang and Fei Liu and Qiang Luo and Yuan Tian and Qiang Zou and Chen Li and Chengmin Shen and Shaozhi Deng and Changzhi Gu and Ningsheng Xu and Hongjun Gao",

year = "2012",

month = dec,

doi = "10.1007/s12274-012-0273-7",

language = "English",

volume = "5",

pages = "896--902",

journal = "Nano Research",

issn = "1998-0124",

publisher = "Tsinghua University Press",

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TY - JOUR

T1 - Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties

AU - Huang, Yuan

AU - Liu, Fei

AU - Luo, Qiang

AU - Tian, Yuan

AU - Zou, Qiang

AU - Li, Chen

AU - Shen, Chengmin

AU - Deng, Shaozhi

AU - Gu, Changzhi

AU - Xu, Ningsheng

AU - Gao, Hongjun

PY - 2012/12

Y1 - 2012/12

N2 - Large-area patterned boron carbide nanowires (B4C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B4C NWs is about 50 nm, with a mean length of 20 μm. The B4C NWs have a single-crystal structure and conductivities around 5. 1 × 10-2 Ω-1·cm-1. Field emission measurements of patterned B4C NWs films show that their turn-on electric field is 2. 7 V/μm, lower than that of continuous B4C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B4C NWs are a promising candidate for flexible cold cathode materials.

AB - Large-area patterned boron carbide nanowires (B4C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B4C NWs is about 50 nm, with a mean length of 20 μm. The B4C NWs have a single-crystal structure and conductivities around 5. 1 × 10-2 Ω-1·cm-1. Field emission measurements of patterned B4C NWs films show that their turn-on electric field is 2. 7 V/μm, lower than that of continuous B4C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B4C NWs are a promising candidate for flexible cold cathode materials.

KW - Boron carbide nanowires

KW - field emission properties

KW - flexible

KW - patterned

UR - https://www.scopus.com/pages/publications/84871311608

U2 - 10.1007/s12274-012-0273-7

DO - 10.1007/s12274-012-0273-7

M3 - Article

AN - SCOPUS:84871311608

SN - 1998-0124

VL - 5

SP - 896

EP - 902

JO - Nano Research

JF - Nano Research

IS - 12

ER -

Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties

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