Fabrication and characterization of bilayer graphene transistors

The emergence of graphene has brought hope for the continued scaling of transistors. In this study, we detailed the fabrication process of the back-gate bilayer graphene transistor and fully analysed its electrical properties. The PMMA wet transfer is used to obtain the bilayer graphene film. The results indicate that the contact between graphene and metal is ohmic. The transfer characteristic curve shows a large on-state current (I_ON) up to 2.34 mA but a minimal current switching ratio because the bandgap of the bilayer graphene is not fully opened. The device shows P-type properties because of the contamination during the wet transfer process. The electrical properties of the back-gate bilayer graphene transistor are fully analysed. The results contribute to a deeper understanding of bilayer graphene's electronic characteristics and lay the groundwork for the future research.