摘要
This article was originally published online on 18 March 2022 with missing and incorrectly numbered reference citations. On page 3, a citation to Ref. 26 has been added in the left column, the last sentence just above Fig. 3. On page 5, in the left column, fifth line of text under heading B 1, the citation has been updated to Refs. 64, 79. On page 6, in the left column, fourth line of text, the citation has been updated to Ref. 88. On page 9, right column, eleventh line of text, the citation is updated to Ref. 90. All online versions of this article were corrected on 22 March 2022. AIP Publishing apologizes for this error.
| 源语言 | 英语 |
|---|---|
| 期刊论文编号 | 149901 |
| 期刊 | Journal of Applied Physics |
| 卷 | 131 |
| 期 | 14 |
| DOI |
|
| 出版状态 | 已出版 - 14 4月 2022 |
学术指纹
探究 'Erratum: Phase-controlled epitaxial growth of MoTe2: Approaching high-quality 2D materials for electronic devices with low contact resistance (Journal of Applied Physics (2022) 131 (110902) DOI: 10.1063/5.0073650)' 的科研主题。它们共同构成独一无二的学术指纹。引用此
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