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Erratum: Phase-controlled epitaxial growth of MoTe2: Approaching high-quality 2D materials for electronic devices with low contact resistance (Journal of Applied Physics (2022) 131 (110902) DOI: 10.1063/5.0073650)

  • Li Tao*
  • , Yaoqiang Zhou
  • , Jian Bin Xu*
  • *此作品的通讯作者
  • Chinese University of Hong Kong

科研成果: 期刊稿件评论/辩论

摘要

This article was originally published online on 18 March 2022 with missing and incorrectly numbered reference citations. On page 3, a citation to Ref. 26 has been added in the left column, the last sentence just above Fig. 3. On page 5, in the left column, fifth line of text under heading B 1, the citation has been updated to Refs. 64, 79. On page 6, in the left column, fourth line of text, the citation has been updated to Ref. 88. On page 9, right column, eleventh line of text, the citation is updated to Ref. 90. All online versions of this article were corrected on 22 March 2022. AIP Publishing apologizes for this error.

源语言英语
期刊论文编号149901
期刊Journal of Applied Physics
131
14
DOI
出版状态已出版 - 14 4月 2022

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