Enhancing piezoelectric response in (002)-Oriented Ta_xAl_(1−x)N films by magnetron-sputtering composition-tunable AlTa alloys

Aluminum nitride (AlN) films suffer from poor piezoelectric response due to the local hexagonal symmetry of wurtzite crystal structure. The fundamental mechanism of improving piezoelectric response in Ta-doped AlN thin films has not been fully understood. Here, we report that composition-tunable AlTa alloys, instead of Al and Ta individual sputtering targets, can be employed to deposit (002)-oriented Ta_xAl_(1−x)N films by magnetron-sputtering, where Ta-doping ratio is tunable by changing Al:Ta composition ratio of the AlTa alloys. Importantly, Ta-doping enhances spontaneous polarization to improve piezoelectricity significantly, as suggested by a threefold increase of the effective piezoelectric coefficients (d_33,eff) upon doping 7 at.% Ta. A better alignment of spontaneous polarization for stronger piezoelectric response originates from the reduction in point defects and crystalline disorder in the reduced-symmetrical wurtzite structure by doping Ta in the Ta_xAl_(1−x)N. This study provides significant insights in improving piezoelectric response in AlN for the development of high-performance film-bulk-acoustic-resonators.