Ellipsometry study of InN thin films prepared by magnetron sputtering

F. Li; D. Mo; C. B. Cao; Y. L. Zhang; H. L.W. Chan; C. L. Choy

doi:10.1023/A:1012992810476

Ellipsometry study of InN thin films prepared by magnetron sputtering

F. Li
, D. Mo^*
, C. B. Cao
, Y. L. Zhang
, H. L.W. Chan
, C. L. Choy

^*此作品的通讯作者

Sun Yat-Sen University
Hong Kong Polytechnic University

科研成果: 期刊稿件 › 文章 › 同行评审

12 引用（Scopus）

摘要

Indium nitride (INN) thin films have been deposited on Si(100) substrates at temperature of 100-400°C by reactive radio frequency (RF) magnetron sputtering. We measured the ellipsometric spectra of the InN film samples, and obtained the optical constants for the wavelength range of 410-1100 nm. The absorption edge of the InN films is 1.85-1.90 eV. The thicknesses of various InN films are found to be dependent on the substrate temperature.

源语言	英语
页（从-至）	725-728
页数	4
期刊	Journal of Materials Science: Materials in Electronics
卷	12
期	12
DOI	https://doi.org/10.1023/A:1012992810476
出版状态	已出版 - 12月 2001
已对外发布	是

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abstract = "Indium nitride (INN) thin films have been deposited on Si(100) substrates at temperature of 100-400°C by reactive radio frequency (RF) magnetron sputtering. We measured the ellipsometric spectra of the InN film samples, and obtained the optical constants for the wavelength range of 410-1100 nm. The absorption edge of the InN films is 1.85-1.90 eV. The thicknesses of various InN films are found to be dependent on the substrate temperature.",

author = "F. Li and D. Mo and Cao, \{C. B.\} and Zhang, \{Y. L.\} and Chan, \{H. L.W.\} and Choy, \{C. L.\}",

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AU - Li, F.

AU - Mo, D.

AU - Cao, C. B.

AU - Zhang, Y. L.

AU - Chan, H. L.W.

AU - Choy, C. L.

PY - 2001/12

Y1 - 2001/12

N2 - Indium nitride (INN) thin films have been deposited on Si(100) substrates at temperature of 100-400°C by reactive radio frequency (RF) magnetron sputtering. We measured the ellipsometric spectra of the InN film samples, and obtained the optical constants for the wavelength range of 410-1100 nm. The absorption edge of the InN films is 1.85-1.90 eV. The thicknesses of various InN films are found to be dependent on the substrate temperature.

AB - Indium nitride (INN) thin films have been deposited on Si(100) substrates at temperature of 100-400°C by reactive radio frequency (RF) magnetron sputtering. We measured the ellipsometric spectra of the InN film samples, and obtained the optical constants for the wavelength range of 410-1100 nm. The absorption edge of the InN films is 1.85-1.90 eV. The thicknesses of various InN films are found to be dependent on the substrate temperature.

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JF - Journal of Materials Science: Materials in Electronics

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Ellipsometry study of InN thin films prepared by magnetron sputtering

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