摘要
By using a first-principles numerical method, the electronic structures of face-centered cubic Ni doped with H, H+ and H- are investigated. In two adopted cluster models, H occupies the centers of octahedron and tetrahedron as interstitial. It was found that the former is preferentially occupied. The constructed Ni-H, Ni-H+ and Ni-H- bonds are only slightly different due to electron flowing. The residual (doping H- ) or insufficient (doping H+ ) electrons are basically absorbed or supplied by the further matrix atoms. The additions induce a strong reduction of the interactions between their first neighbor atoms, but a weaker alteration of those between their first and second neighbors, which is the expression of hydrogen local effect and can be regarded as an explanation of hydrogen embrittlement.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 200-206 |
| 页数 | 7 |
| 期刊 | Science in China, Series E: Technological Sciences |
| 卷 | 44 |
| 期 | 2 |
| 出版状态 | 已出版 - 4月 2001 |
| 已对外发布 | 是 |
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