Electron-hole overlap dictates the hole spin relaxation rate in nanocrystal heterostructures

Jun He; Haizheng Zhong; Gregory D. Scholes

doi:10.1103/PhysRevLett.105.046601

Electron-hole overlap dictates the hole spin relaxation rate in nanocrystal heterostructures

Jun He^*
, Haizheng Zhong
, Gregory D. Scholes

^*此作品的通讯作者

University of Toronto
Central South University

科研成果: 期刊稿件 › 文章 › 同行评审

63 引用（Scopus）

摘要

Hole spin relaxation dynamics in CdTe/CdSe core-shell nanocrystals are measured by an ultrafast polarization transient grating technique. Photoexcited charge separation in type II structures suppresses the electron-hole exchange interaction and the hole spin relaxation time constant is found to increase from ∼0.3ps to ∼10ps at 293 K as the CdSe shell thickness increases from ∼0.2nm to ∼2.4nm. Analysis of these data suggests that spin relaxation in semiconductor nanostructures is tunable between type I and type II localization according to an electron-hole overlap function.

源语言	英语
文章编号	046601
期刊	Physical Review Letters
卷	105
期	4
DOI	https://doi.org/10.1103/PhysRevLett.105.046601
出版状态	已出版 - 21 7月 2010
已对外发布	是

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abstract = "Hole spin relaxation dynamics in CdTe/CdSe core-shell nanocrystals are measured by an ultrafast polarization transient grating technique. Photoexcited charge separation in type II structures suppresses the electron-hole exchange interaction and the hole spin relaxation time constant is found to increase from ∼0.3ps to ∼10ps at 293 K as the CdSe shell thickness increases from ∼0.2nm to ∼2.4nm. Analysis of these data suggests that spin relaxation in semiconductor nanostructures is tunable between type I and type II localization according to an electron-hole overlap function.",

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N2 - Hole spin relaxation dynamics in CdTe/CdSe core-shell nanocrystals are measured by an ultrafast polarization transient grating technique. Photoexcited charge separation in type II structures suppresses the electron-hole exchange interaction and the hole spin relaxation time constant is found to increase from ∼0.3ps to ∼10ps at 293 K as the CdSe shell thickness increases from ∼0.2nm to ∼2.4nm. Analysis of these data suggests that spin relaxation in semiconductor nanostructures is tunable between type I and type II localization according to an electron-hole overlap function.

AB - Hole spin relaxation dynamics in CdTe/CdSe core-shell nanocrystals are measured by an ultrafast polarization transient grating technique. Photoexcited charge separation in type II structures suppresses the electron-hole exchange interaction and the hole spin relaxation time constant is found to increase from ∼0.3ps to ∼10ps at 293 K as the CdSe shell thickness increases from ∼0.2nm to ∼2.4nm. Analysis of these data suggests that spin relaxation in semiconductor nanostructures is tunable between type I and type II localization according to an electron-hole overlap function.

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Electron-hole overlap dictates the hole spin relaxation rate in nanocrystal heterostructures

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