TY - JOUR
T1 - Electron confinement-enhanced green InP-based quantum dots for active-matrix LEDs displays
AU - Guo, Ning
AU - He, Ke
AU - Li, Hui
AU - Li, Tianchen
AU - Li, Fengmian
AU - Feng, Jiangang
AU - He, Zhiyuan
AU - Jiang, Lei
AU - Wu, Yuchen
N1 - Publisher Copyright:
© The Author(s) 2026.
PY - 2026/12
Y1 - 2026/12
N2 - The facet-selective growth of shells on green InP-based quantum dots result in their inferior electron confinement capabilities, posing a challenge for the realization of completely cadmium-free quantum dot light-emitting diode displays. Here, we develop a surface energy homogenization strategy based on ligand adsorption using n-octylamine and diphenylphosphine selenide, effectively suppressing selective growth of ZnSe on the InP (111) facet, resulting in strongly electron-confined InP/ZnSe/ZnS quantum dots with a quantum yield exceeding 92% and a full-width at half-maximum of 35 nm. The resulting quantum dot light-emitting diodes achieve a peak external quantum efficiency of 23.50% and a luminance exceeding 1.4 × 105cd m-2, with a 107.5-fold increase in device lifetime. Utilized asymmetric wettability-mediated assembly strategy, we achieved quantum dot arrays with an impressive resolution of 8460 PPI. Furthermore, integrating the quantum dots into an active-matrix LED display, we successfully demonstrate the display of both static and dynamic images.
AB - The facet-selective growth of shells on green InP-based quantum dots result in their inferior electron confinement capabilities, posing a challenge for the realization of completely cadmium-free quantum dot light-emitting diode displays. Here, we develop a surface energy homogenization strategy based on ligand adsorption using n-octylamine and diphenylphosphine selenide, effectively suppressing selective growth of ZnSe on the InP (111) facet, resulting in strongly electron-confined InP/ZnSe/ZnS quantum dots with a quantum yield exceeding 92% and a full-width at half-maximum of 35 nm. The resulting quantum dot light-emitting diodes achieve a peak external quantum efficiency of 23.50% and a luminance exceeding 1.4 × 105cd m-2, with a 107.5-fold increase in device lifetime. Utilized asymmetric wettability-mediated assembly strategy, we achieved quantum dot arrays with an impressive resolution of 8460 PPI. Furthermore, integrating the quantum dots into an active-matrix LED display, we successfully demonstrate the display of both static and dynamic images.
UR - https://www.scopus.com/pages/publications/105035307952
U2 - 10.1038/s41467-026-69050-7
DO - 10.1038/s41467-026-69050-7
M3 - Article
C2 - 41760630
AN - SCOPUS:105035307952
SN - 2041-1723
VL - 17
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 3268
ER -