Electrical and magnetic properties of FeSi2 nanowires

Zu Lin Peng; S. Liang

doi:10.1088/0256-307X/25/11/075

Electrical and magnetic properties of FeSi₂ nanowires

Zu Lin Peng^*
, S. Liang

^*此作品的通讯作者

物理学院

Arizona State University

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

We report the characterization of self-assembled epitaxially grown FeSi₂ nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm × 5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi'2 NW is estimated to be 225 μΩcm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3 0.1 Bohr magneton per iron atom for these FeSi₂ NWs.

源语言	英语
页（从-至）	4113-4116
页数	4
期刊	Chinese Physics Letters
卷	25
期	11
DOI	https://doi.org/10.1088/0256-307X/25/11/075
出版状态	已出版 - 1 11月 2008

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title = "Electrical and magnetic properties of FeSi2 nanowires",

abstract = "We report the characterization of self-assembled epitaxially grown FeSi2 nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm × 5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi'2 NW is estimated to be 225 μΩcm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3 0.1 Bohr magneton per iron atom for these FeSi2 NWs.",

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AU - Peng, Zu Lin

AU - Liang, S.

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N2 - We report the characterization of self-assembled epitaxially grown FeSi2 nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm × 5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi'2 NW is estimated to be 225 μΩcm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3 0.1 Bohr magneton per iron atom for these FeSi2 NWs.

AB - We report the characterization of self-assembled epitaxially grown FeSi2 nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm × 5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi'2 NW is estimated to be 225 μΩcm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3 0.1 Bohr magneton per iron atom for these FeSi2 NWs.

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VL - 25

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JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 11

ER -

Electrical and magnetic properties of FeSi2 nanowires

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Electrical and magnetic properties of FeSi₂ nanowires