@inproceedings{4650c40dd4d8493e97fa705a1375e493,
title = "Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs",
abstract = "{\textemdash}We lead the lightly doped drain (LDD) structure into the bridged-grain (BG) poly-Si thin film transistor (TFT). This combined structure can restrain the gate induced drain leakage current (GIDL) and the electrical characteristics shows not much sacrifice. A high Ion/Ioff current ratio 3.79{\texttimes}108 is achieved. Besides, the device reliability is improved significantly. Because the lateral electrical field decreases by LDD, lower trap state density is generated in the SiO2/poly-Si interface and the grain boundaries of poly-Si near the surface conduction channel, resulting in the stable on-state drive current (Ion) and drain saturation voltage (Vdsat). All test results indicate that the BG poly-Si TFT with a LDD structure will work well and has a great potential for system-on-panel application.",
keywords = "Bridged-grain (BG), Hot-carrier effect (HC effect), Index Terms{\textemdash}low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs), Lightly doped drain (LDD), Reliability",
author = "Jian Guo and Zhinong Yu and Wei Yan and Dawei Shi and Jianshe Xue and Wei Xue",
note = "Publisher Copyright: {\textcopyright} 2019, John Wiley and Sons Inc. All rights reserved.; International Conference on Display Technology, ICDT 2019 ; Conference date: 26-03-2019 Through 29-03-2019",
year = "2019",
doi = "10.1002/SDTP.13642",
language = "English",
series = "Digest of Technical Papers - SID International Symposium",
publisher = "John Wiley and Sons Inc.",
number = "S1",
pages = "766--770",
editor = "Baoping Wang and Chi-Ming Che and Tang, \{Ching W.\} and Shieh, \{Han-Ping D.\} and Kwok, \{Hoi S.\} and Hongxing Xu and Ming Liu and Qionghai Dai and Shou Peng and Yam, \{Vivian Wing-Wah\} and Wei Huang and Xiaomo Wang and Yong Cao and Youliao Zheng and Yue Hao and Yunqi Liu and Zhongcan Ouyang and Zhonglin Wang and Zuyan Xu",
booktitle = "Digest of Technical Papers - SID International Symposium",
address = "United States",
edition = "S1",
}