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Effects of Disorder on the Electronic Structure and Thermoelectric Properties of an Inverse Full-Heusler Mn2CoAl Alloy

  • Hezhang Li
  • , Kei Hayashi*
  • , Yoshimi Nagashima
  • , Shun Yoshioka
  • , Jinfeng Dong
  • , Jing Feng Li
  • , Yuzuru Miyazaki
  • *此作品的通讯作者
  • Tohoku University
  • Tsinghua University

科研成果: 期刊稿件文章同行评审

摘要

We report a detailed analysis of the crystal structure, electronic structure, and thermoelectric (TE) properties of a stoichiometric Mn2CoAl inverse full-Heusler alloy, which has been predicted to be a spin-gapless semiconductor. To reveal the effects of disorder on TE properties (electrical conductivity and Seebeck coefficient), we prepared Mn2Co(Al1-xSix) (x = 0, 0.05, and 0.1) bulk samples by arc melting. The crystal structure analysis indicates that antisite defects exist in the prepared samples. From the measurements of the electrical conductivity and Seebeck coefficient, it is demonstrated that the prepared Mn2CoAl alloy is not a spin-gapless semiconductor but a half-metal. A relation between the crystal structure and TE properties is discussed based on the calculation of the electronic structure considering the antisite defects in Mn2CoAl.

源语言英语
页(从-至)2543-2547
页数5
期刊Chemistry of Materials
33
7
DOI
出版状态已出版 - 13 4月 2021
已对外发布

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