Effects of arrival ratio and inclined angle on the orientation competition in ion beam assisting deposited yttria-stabilized zirconia thin films

Yttria-stabilized zirconia (YSZ) thin films with preferred crystallographic orientation are very important for the development of YBCO coated conductors. Effects of arrival ratio and inclined angle on a previously found orientation competition in ion beam assisting deposited YSZ thin films were studied in detail. In ion beam assisting deposited YSZ films, under low assisting ions energy and current, a (0 0 1) oriented biaxial texture was gradually induced as ion to atom arrival ratio increased. In the case of ion beam assisted inclined deposition, (0 0 1) orientation was enhanced and an inclined development of the crystal grains was found.