摘要
Double-side superconducting MgB2 films have been grown on double-side polished sapphire substrates by using hybrid physical-chemical vapor deposition method. The zero resistance temperatures TC(0)>37 K and the critical current densities JC(5 K,0 T)>3×10 6 A/cm2 have been achieved for both sides. In the first 8.73 G MgB2 microstrip resonator fabricated by a double-side film, an unloaded Q value of 3400 at 11 K was obtained corresponding to surface resistance of 1.2 mΩ for the MgB2/Al2O3 interface. By simply using a sapphire substrate with two polished holes, superconducting connection has been achieved for the double-side MgB2 film. The results show potential applications for the superconducting MgB 2 films in microwave and electronic devices.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 262502 |
| 期刊 | Applied Physics Letters |
| 卷 | 88 |
| 期 | 26 |
| DOI | |
| 出版状态 | 已出版 - 2006 |
| 已对外发布 | 是 |
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