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Double quantum dot as detector of spin bias

  • Qing Feng Sun*
  • , Yanxia Xing
  • , Shun Qing Shen
  • *此作品的通讯作者
  • CAS - Institute of Physics
  • The University of Hong Kong

科研成果: 期刊稿件文章同行评审

摘要

It was proposed that a double quantum dot can be used as a detector of the spin bias. Electron transport through a double quantum dot is theoretically investigated when a pure spin bias is applied on two conducting leads in contact with the quantum dot. It is found that the spin polarization in the left and right dots may be spontaneously induced, while the intradot levels are located within the spin bias window and breaks the left-right symmetry of the two quantum dots. As a result, a large current emerges. For an open external circuit, a charge bias instead of a charge current will be induced at equilibrium, which is believed to be measurable according to the current nanotechnology. This method may provide a practical and whole electrical approach to detect the spin bias (or the spin current) by measuring the charge bias or current in a double quantum dot.

源语言英语
文章编号195313
期刊Physical Review B - Condensed Matter and Materials Physics
77
19
DOI
出版状态已出版 - 13 5月 2008
已对外发布

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