Direct extraction method of small-signal model for III-V HBT

Chujun Wang; Feng Qian; Pin Xiang; Weibin Zheng

Direct extraction method of small-signal model for III-V HBT

Chujun Wang^*
, Feng Qian
, Pin Xiang
, Weibin Zheng

^*此作品的通讯作者

Nanjing Electronic Devices Institute

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

An accurate direct extraction method of small-signal model parameters for the heterojunction bipolar transistor (HBT) is presented. The extraction procedure, based on the hyper-PI equivalent circuit for the HBT, used a set of S-parameters measured under different bias conditions. An experimental verification on an InGaP/GaAs HBT device with 2 fingers and 2 μm×20 μm emitter area was carried out, and excellent results were obtained up to 20 GHz. The fitting residual error with extracted data for three different bias points over DC-20 GHz, was less than 6%.

源语言	英语
页（从-至）	13-17
页数	5
期刊	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
卷	34
期	1
出版状态	已出版 - 2月 2014
已对外发布	是

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title = "Direct extraction method of small-signal model for III-V HBT",

abstract = "An accurate direct extraction method of small-signal model parameters for the heterojunction bipolar transistor (HBT) is presented. The extraction procedure, based on the hyper-PI equivalent circuit for the HBT, used a set of S-parameters measured under different bias conditions. An experimental verification on an InGaP/GaAs HBT device with 2 fingers and 2 μm×20 μm emitter area was carried out, and excellent results were obtained up to 20 GHz. The fitting residual error with extracted data for three different bias points over DC-20 GHz, was less than 6\%.",

keywords = "GaAs, Heterojunction bipolar transistor (HBT), Small-signal model",

author = "Chujun Wang and Feng Qian and Pin Xiang and Weibin Zheng",

year = "2014",

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language = "English",

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T1 - Direct extraction method of small-signal model for III-V HBT

AU - Wang, Chujun

AU - Qian, Feng

AU - Xiang, Pin

AU - Zheng, Weibin

PY - 2014/2

Y1 - 2014/2

N2 - An accurate direct extraction method of small-signal model parameters for the heterojunction bipolar transistor (HBT) is presented. The extraction procedure, based on the hyper-PI equivalent circuit for the HBT, used a set of S-parameters measured under different bias conditions. An experimental verification on an InGaP/GaAs HBT device with 2 fingers and 2 μm×20 μm emitter area was carried out, and excellent results were obtained up to 20 GHz. The fitting residual error with extracted data for three different bias points over DC-20 GHz, was less than 6%.

AB - An accurate direct extraction method of small-signal model parameters for the heterojunction bipolar transistor (HBT) is presented. The extraction procedure, based on the hyper-PI equivalent circuit for the HBT, used a set of S-parameters measured under different bias conditions. An experimental verification on an InGaP/GaAs HBT device with 2 fingers and 2 μm×20 μm emitter area was carried out, and excellent results were obtained up to 20 GHz. The fitting residual error with extracted data for three different bias points over DC-20 GHz, was less than 6%.

KW - GaAs

KW - Heterojunction bipolar transistor (HBT)

KW - Small-signal model

UR - https://www.scopus.com/pages/publications/84897869241

M3 - Article

AN - SCOPUS:84897869241

SN - 1000-3819

VL - 34

SP - 13

EP - 17

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 1

ER -

Direct extraction method of small-signal model for III-V HBT

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