TY - JOUR
T1 - Direct bonded aluminum on silicon nitride substrates via silver-aluminum interfacial reactions
AU - Zhang, Donglin
AU - Wen, Duhe
AU - Zhang, Yuan
AU - Ma, Luke
AU - Chen, Shuquan
AU - Jiang, Miao
AU - Zhao, Xiuchen
AU - Lee, Chin C.
AU - Zhang, Gang
AU - Huo, Yongjun
N1 - Publisher Copyright:
© 2026 Elsevier B.V.
PY - 2026/12/15
Y1 - 2026/12/15
N2 - Silicon nitride (Si3N4) ceramic substrates are widely considered as promising candidates for high-power electronic modules due to their superior mechanical properties, high thermal conductivity, and a coefficient of thermal expansion well matched to power semiconductor devices. Currently, metallized Si3N4 substrates are predominantly copper-clad (Cu-Si3N4 substrates) fabricated via the active metal brazing (AMB) process. In the context of the emerging “copper-to-aluminum substitution” trend, aluminum-clad Si3N4 substrates (Al-Si3N4) have become particularly attractive for applications such as aerospace owing to its lightweight nature, high thermal conductivity, and low cost. Nevertheless, the low melting point of Al, below the processing temperature of AMB, necessitates alternative low-temperature bonding strategies. In this study, Ti/Ag thin films were deposited on Si3N4 substrates via electron beam evaporation (E-beam). Robust bonding between Al and Si3N4 was achieved in a direct bonded aluminum on Si3N4 (DBA@Si3N4) system via Ag-Al interfacial reactions. A maximum shear strength of 61 MPa was achieved at a bonding temperature of 570 ℃ under a bonding pressure of 1 MPa for 5 min, and a dense bonding joint was formed. This work provides technical support and a theoretical foundation for the development of high-performance Al-Si3N4 substrates.
AB - Silicon nitride (Si3N4) ceramic substrates are widely considered as promising candidates for high-power electronic modules due to their superior mechanical properties, high thermal conductivity, and a coefficient of thermal expansion well matched to power semiconductor devices. Currently, metallized Si3N4 substrates are predominantly copper-clad (Cu-Si3N4 substrates) fabricated via the active metal brazing (AMB) process. In the context of the emerging “copper-to-aluminum substitution” trend, aluminum-clad Si3N4 substrates (Al-Si3N4) have become particularly attractive for applications such as aerospace owing to its lightweight nature, high thermal conductivity, and low cost. Nevertheless, the low melting point of Al, below the processing temperature of AMB, necessitates alternative low-temperature bonding strategies. In this study, Ti/Ag thin films were deposited on Si3N4 substrates via electron beam evaporation (E-beam). Robust bonding between Al and Si3N4 was achieved in a direct bonded aluminum on Si3N4 (DBA@Si3N4) system via Ag-Al interfacial reactions. A maximum shear strength of 61 MPa was achieved at a bonding temperature of 570 ℃ under a bonding pressure of 1 MPa for 5 min, and a dense bonding joint was formed. This work provides technical support and a theoretical foundation for the development of high-performance Al-Si3N4 substrates.
KW - Ag-Al interfacial reaction
KW - Direct bonded aluminum on SiN
KW - High-power electronic modules
KW - Thin Ag interlayer
UR - https://www.scopus.com/pages/publications/105046399366
U2 - 10.1016/j.apsusc.2026.168000
DO - 10.1016/j.apsusc.2026.168000
M3 - Article
AN - SCOPUS:105046399366
SN - 0169-4332
VL - 749
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 168000
ER -