Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber

Qiu Lin Zhang; Bao Hua Feng; Dong Xiang Zhang; Pan Ming Fu; Zhi Guo Zhang; Zhi Wei Zhao; Pei Zhen Deng; Jun Xu; Xiao Dong Xu; Yong Gang Wang; Xiao Yu Ma

doi:10.1088/0256-307X/20/10/325

Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber

Qiu Lin Zhang^*
, Bao Hua Feng
, Dong Xiang Zhang
, Pan Ming Fu
, Zhi Guo Zhang
, Zhi Wei Zhao
, Pei Zhen Deng
, Jun Xu
, Xiao Dong Xu
, Yong Gang Wang
, Xiao Yu Ma

^*此作品的通讯作者

CAS - Institute of Physics
CAS - Shanghai Institute of Optics and Fine Mechanics
CAS - Institute of Semiconductors

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 μJ 52 ns pulses at 1030 nm with a pulse repetition rate of 7.8 kHz in a TEM₀₀-mode.

源语言	英语
页（从-至）	1741-1743
页数	3
期刊	Chinese Physics Letters
卷	20
期	10
DOI	https://doi.org/10.1088/0256-307X/20/10/325
出版状态	已出版 - 10月 2003
已对外发布	是

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@article{c63508408362448e910ee15d580ce9ba,

title = "Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber",

abstract = "A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 μJ 52 ns pulses at 1030 nm with a pulse repetition rate of 7.8 kHz in a TEM00-mode.",

author = "Zhang, \{Qiu Lin\} and Feng, \{Bao Hua\} and Zhang, \{Dong Xiang\} and Fu, \{Pan Ming\} and Zhang, \{Zhi Guo\} and Zhao, \{Zhi Wei\} and Deng, \{Pei Zhen\} and Jun Xu and Xu, \{Xiao Dong\} and Wang, \{Yong Gang\} and Ma, \{Xiao Yu\}",

year = "2003",

month = oct,

doi = "10.1088/0256-307X/20/10/325",

language = "English",

volume = "20",

pages = "1741--1743",

journal = "Chinese Physics Letters",

issn = "0256-307X",

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TY - JOUR

T1 - Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber

AU - Zhang, Qiu Lin

AU - Feng, Bao Hua

AU - Zhang, Dong Xiang

AU - Fu, Pan Ming

AU - Zhang, Zhi Guo

AU - Zhao, Zhi Wei

AU - Deng, Pei Zhen

AU - Xu, Jun

AU - Xu, Xiao Dong

AU - Wang, Yong Gang

AU - Ma, Xiao Yu

PY - 2003/10

Y1 - 2003/10

N2 - A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 μJ 52 ns pulses at 1030 nm with a pulse repetition rate of 7.8 kHz in a TEM00-mode.

AB - A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 μJ 52 ns pulses at 1030 nm with a pulse repetition rate of 7.8 kHz in a TEM00-mode.

UR - https://www.scopus.com/pages/publications/0142054059

U2 - 10.1088/0256-307X/20/10/325

DO - 10.1088/0256-307X/20/10/325

M3 - Article

AN - SCOPUS:0142054059

SN - 0256-307X

VL - 20

SP - 1741

EP - 1743

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 10

ER -

Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber

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