Development of thermodynamic modeling of oxygen-doped GaN semiconductor

Jing Bo Li; Jean Claude Tedenac; Changrong Li; Weijing Zhang

doi:10.1016/S0364-5916(03)00025-7

Development of thermodynamic modeling of oxygen-doped GaN semiconductor

Jing Bo Li^*
, Jean Claude Tedenac
, Changrong Li
, Weijing Zhang

^*此作品的通讯作者

Universite Montpellier II
CAS - Institute of Physics
University of Science and Technology Beijing

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

The thermodynamic modeling of GaN was refined to describe the semiconducting properties of GaN semiconductors with the use of CEF (Compound Energy Formalism). Oxygen doped GaN was taken as an example. The formation energies of charged component compounds were defined as functions of the Fermi-level based on the results of the ab initio calculations and adjusted to fit experimental data. The yellow luminescence (YL) effect in unintentionally doped GaN was described.

源语言	英语
页（从-至）	1-8
页数	8
期刊	Calphad: Computer Coupling of Phase Diagrams and Thermochemistry
卷	27
期	1
DOI	https://doi.org/10.1016/S0364-5916(03)00025-7
出版状态	已出版 - 3月 2003
已对外发布	是

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title = "Development of thermodynamic modeling of oxygen-doped GaN semiconductor",

abstract = "The thermodynamic modeling of GaN was refined to describe the semiconducting properties of GaN semiconductors with the use of CEF (Compound Energy Formalism). Oxygen doped GaN was taken as an example. The formation energies of charged component compounds were defined as functions of the Fermi-level based on the results of the ab initio calculations and adjusted to fit experimental data. The yellow luminescence (YL) effect in unintentionally doped GaN was described.",

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AU - Li, Changrong

AU - Zhang, Weijing

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AB - The thermodynamic modeling of GaN was refined to describe the semiconducting properties of GaN semiconductors with the use of CEF (Compound Energy Formalism). Oxygen doped GaN was taken as an example. The formation energies of charged component compounds were defined as functions of the Fermi-level based on the results of the ab initio calculations and adjusted to fit experimental data. The yellow luminescence (YL) effect in unintentionally doped GaN was described.

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Development of thermodynamic modeling of oxygen-doped GaN semiconductor

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