Development of advanced etch-stop structures oxide TFT

Fei Shang; Yong Xiang; Rui Wang; Xiaolin Wang; Zhonghao Huang; Zhuo Xu; Shaoru Li; Zhulin Liu; Haijun Qiu; Jianfeng Yuan; Taiye Min; Xiaofeng Ma; Yongliang Zhao

doi:10.1002/sdtp.12102

Development of advanced etch-stop structures oxide TFT

Fei Shang
, Yong Xiang
, Rui Wang
, Xiaolin Wang
, Zhonghao Huang
, Zhuo Xu
, Shaoru Li
, Zhulin Liu
, Haijun Qiu
, Jianfeng Yuan
, Taiye Min
, Xiaofeng Ma
, Yongliang Zhao

Chongqing BOE Optoelectronics Technology CO., LTD
University of Electronic Science and Technology of China

科研成果: 期刊稿件 › 会议文章 › 同行评审

1 引用（Scopus）

摘要

Advanced Etch-Stop s tructure In-Ga-Zn-Oxide thin film transistor (A-ES TFT) using SD and IGZO layer self-aligned process is lower production cost, less parasitic capacitance than etch-stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5-inch liquid crystal panel using A-ES TFTs by only two photomask.

源语言	英语
页（从-至）	1212-1214
页数	3
期刊	Digest of Technical Papers - SID International Symposium
卷	49
期	1
DOI	https://doi.org/10.1002/sdtp.12102
出版状态	已出版 - 2018
已对外发布	是
活动	SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, 美国期限: 20 5月 2018 → 25 5月 2018

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title = "Development of advanced etch-stop structures oxide TFT",

abstract = "Advanced Etch-Stop s tructure In-Ga-Zn-Oxide thin film transistor (A-ES TFT) using SD and IGZO layer self-aligned process is lower production cost, less parasitic capacitance than etch-stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5-inch liquid crystal panel using A-ES TFTs by only two photomask.",

keywords = "A-ES IGZO TFT, LCD, Photomask, Reliability",

author = "Fei Shang and Yong Xiang and Rui Wang and Xiaolin Wang and Zhonghao Huang and Zhuo Xu and Shaoru Li and Zhulin Liu and Haijun Qiu and Jianfeng Yuan and Taiye Min and Xiaofeng Ma and Yongliang Zhao",

note = "Publisher Copyright: {\textcopyright} 2018, Blackwell Publishing Ltd. All rights reserved.; SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 ; Conference date: 20-05-2018 Through 25-05-2018",

year = "2018",

doi = "10.1002/sdtp.12102",

language = "English",

volume = "49",

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TY - JOUR

T1 - Development of advanced etch-stop structures oxide TFT

AU - Shang, Fei

AU - Xiang, Yong

AU - Wang, Rui

AU - Wang, Xiaolin

AU - Huang, Zhonghao

AU - Xu, Zhuo

AU - Li, Shaoru

AU - Liu, Zhulin

AU - Qiu, Haijun

AU - Yuan, Jianfeng

AU - Min, Taiye

AU - Ma, Xiaofeng

AU - Zhao, Yongliang

PY - 2018

Y1 - 2018

N2 - Advanced Etch-Stop s tructure In-Ga-Zn-Oxide thin film transistor (A-ES TFT) using SD and IGZO layer self-aligned process is lower production cost, less parasitic capacitance than etch-stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5-inch liquid crystal panel using A-ES TFTs by only two photomask.

AB - Advanced Etch-Stop s tructure In-Ga-Zn-Oxide thin film transistor (A-ES TFT) using SD and IGZO layer self-aligned process is lower production cost, less parasitic capacitance than etch-stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5-inch liquid crystal panel using A-ES TFTs by only two photomask.

KW - A-ES IGZO TFT

KW - LCD

KW - Photomask

KW - Reliability

UR - https://www.scopus.com/pages/publications/85054036164

U2 - 10.1002/sdtp.12102

DO - 10.1002/sdtp.12102

M3 - Conference article

AN - SCOPUS:85054036164

SN - 0097-966X

VL - 49

SP - 1212

EP - 1214

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - SID Symposium, Seminar, and Exhibition 2018, Display Week 2018

Y2 - 20 May 2018 through 25 May 2018

ER -

Development of advanced etch-stop structures oxide TFT

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