Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit

Liyan Zhu; Yu Yan; Hua Bai

doi:10.1109/TCPMT.2024.3371248

Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit

Liyan Zhu
, Yu Yan
, Hua Bai^*

^*此作品的通讯作者

Virginia Polytechnic Institute and State University
Analog Devices, Inc.
University of Tennessee, Knoxville

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

This article focuses on the design of a 650 V/150 A gallium nitride (GaN) power module. Direct bonded copper (DBC) is employed for the thermal pad insulation and the printed circuit board (PCB) is adopted for the flux cancellation, isolated bias power supply, and gate-drive-circuit integration. The packaged module exhibits high current capability (>150 A), high compactness (45× 33×9.6 mm3), and excellent thermal resistance (0.43 °C/W). The insulated drain-source and integrated isolated gate-drive circuit also facilitate the assembly of GaN devices, particularly in high-power applications. Double pulse test (DPT) at 450 V/150 A shows 50 V voltage spike only, which makes the proposed module well suited for high-power applications.

源语言	英语
页（从-至）	417-427
页数	11
期刊	IEEE Transactions on Components, Packaging and Manufacturing Technology
卷	14
期	3
DOI	https://doi.org/10.1109/TCPMT.2024.3371248
出版状态	已出版 - 1 3月 2024
已对外发布	是

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title = "Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit",

abstract = "This article focuses on the design of a 650 V/150 A gallium nitride (GaN) power module. Direct bonded copper (DBC) is employed for the thermal pad insulation and the printed circuit board (PCB) is adopted for the flux cancellation, isolated bias power supply, and gate-drive-circuit integration. The packaged module exhibits high current capability (>150 A), high compactness (45× 33×9.6 mm3), and excellent thermal resistance (0.43 °C/W). The insulated drain-source and integrated isolated gate-drive circuit also facilitate the assembly of GaN devices, particularly in high-power applications. Double pulse test (DPT) at 450 V/150 A shows 50 V voltage spike only, which makes the proposed module well suited for high-power applications.",

keywords = "Direct bonded copper (DBC), gallium nitride (GaN) high electron mobility transistors (HEMTs) package, half-bridge module, integrated gate driver, isolated power supply, transient analysis",

author = "Liyan Zhu and Yu Yan and Hua Bai",

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N2 - This article focuses on the design of a 650 V/150 A gallium nitride (GaN) power module. Direct bonded copper (DBC) is employed for the thermal pad insulation and the printed circuit board (PCB) is adopted for the flux cancellation, isolated bias power supply, and gate-drive-circuit integration. The packaged module exhibits high current capability (>150 A), high compactness (45× 33×9.6 mm3), and excellent thermal resistance (0.43 °C/W). The insulated drain-source and integrated isolated gate-drive circuit also facilitate the assembly of GaN devices, particularly in high-power applications. Double pulse test (DPT) at 450 V/150 A shows 50 V voltage spike only, which makes the proposed module well suited for high-power applications.

AB - This article focuses on the design of a 650 V/150 A gallium nitride (GaN) power module. Direct bonded copper (DBC) is employed for the thermal pad insulation and the printed circuit board (PCB) is adopted for the flux cancellation, isolated bias power supply, and gate-drive-circuit integration. The packaged module exhibits high current capability (>150 A), high compactness (45× 33×9.6 mm3), and excellent thermal resistance (0.43 °C/W). The insulated drain-source and integrated isolated gate-drive circuit also facilitate the assembly of GaN devices, particularly in high-power applications. Double pulse test (DPT) at 450 V/150 A shows 50 V voltage spike only, which makes the proposed module well suited for high-power applications.

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KW - transient analysis

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Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit

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