TY - GEN
T1 - Design and fabrication of planar GaAs Schottky barrier diodes for submillimeter-wave applications
AU - Mou, Jinchao
AU - Yuan, Yong
AU - Lv, Xin
AU - Yu, Weihua
AU - He, Dawei
AU - Wang, Jinghui
AU - Xiao, Guohua
PY - 2010
Y1 - 2010
N2 - The design consideration and fabrication of a planar GaAs Schottky barrier diode with cutoff frequency up to 650 GHz is presented in this paper. The theory and design principle was given at the beginning. Then, the key material and geometrical parameters are analyzed using electron behavior analysis and the finite element method. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Finally the Schottky diode was fabricated and measured.
AB - The design consideration and fabrication of a planar GaAs Schottky barrier diode with cutoff frequency up to 650 GHz is presented in this paper. The theory and design principle was given at the beginning. Then, the key material and geometrical parameters are analyzed using electron behavior analysis and the finite element method. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Finally the Schottky diode was fabricated and measured.
UR - https://www.scopus.com/pages/publications/79953768152
U2 - 10.1109/ICMMT.2010.5524833
DO - 10.1109/ICMMT.2010.5524833
M3 - Conference contribution
AN - SCOPUS:79953768152
SN - 9781424457052
T3 - 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
SP - 1746
EP - 1749
BT - 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
T2 - 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
Y2 - 8 May 2010 through 11 May 2010
ER -