TY - JOUR
T1 - Design and Analysis of a Wideband Gilbert Cell VGA in 0.25-InP DHBT Technology with DC-40-GHz Frequency Response
AU - Gavell, Marcus
AU - Gunnarsson, Sten E.
AU - Angelov, Iltcho
AU - He, Zhongxia Simon
AU - Ferndahl, Mattias
AU - Zirath, Herbert
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2017/10
Y1 - 2017/10
N2 - A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25-μm InP double heterojunction bipolar transistor technology with fT / fmax of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single -7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 mm2. We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias.
AB - A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25-μm InP double heterojunction bipolar transistor technology with fT / fmax of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single -7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 mm2. We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias.
KW - Double heterojunction bipolar transistor (DHBT)
KW - gain bandwidth product (GBP)
KW - Gb/s
KW - InP
KW - radio frequency integrated circuit (RFIC)
KW - variable gain amplifier (VGA)
UR - https://www.scopus.com/pages/publications/85019003496
U2 - 10.1109/TMTT.2017.2693146
DO - 10.1109/TMTT.2017.2693146
M3 - Article
AN - SCOPUS:85019003496
SN - 0018-9480
VL - 65
SP - 3962
EP - 3974
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 10
M1 - 7914700
ER -