Cs_0.05(FA_0.98MA_0.02)_0.95Pb(I_0.98Br_0.02)3-CMOS Image Sensor for Broadband (UV-Vis-NIR) Photodetection with 99.997% Pixel Functionality

The integration of large-scale perovskite films with CMOS technology is crucial to unlock the full potential of broadband image sensing. Despite significant advances, challenges remain in achieving high functional pixel density, uniform film quality, and seamless integration with standard semiconductor processes. In this work, we present a breakthrough approach for depositing exceptionally uniform s_0.05(FA_0.98 MA_0.02)0.95 Pb(I_0.98 Br_0.02)₃ perovskite films onto CMOS chips using vacuum quenching. The resulting 640 × 512 pixel sensor achieves 99.997% of functional pixel density, with broadband ultraviolet-visible-near infrared (UV-Vis-NIR, 300nm-1000nm) response, attributed to excellent uniformity of perovskite films. Additionally, an on-chip broadband image fusion algorithm optimally merges data from the three spectral bands, improving image quality and detail extraction. This monolithic perovskite-CMOS integration approach provides a cost-effective solution for high-performance broadband imaging.