Copper vapor-assisted growth of hexagonal graphene domains on silica islands

Jun Li; Chengmin Shen; Yande Que; Yuan Tian; Lili Jiang; Deliang Bao; Yeliang Wang; Shixuan Du; Hong Jun Gao

doi:10.1063/1.4958872

Copper vapor-assisted growth of hexagonal graphene domains on silica islands

Jun Li
, Chengmin Shen^*
, Yande Que
, Yuan Tian
, Lili Jiang
, Deliang Bao
, Yeliang Wang
, Shixuan Du
, Hong Jun Gao

^*此作品的通讯作者

CAS - Institute of Physics
University of Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

7 引用（Scopus）

摘要

Silica (SiO₂) islands with a dendritic structure were prepared on polycrystalline copper foil, using silane (SiH₄) as a precursor, by annealing at high temperature. Assisted by copper vapor from bare sections of the foil, single-layer hexagonal graphene domains were grown directly on the SiO₂ islands by chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, Raman spectra, and X-ray photoelectron spectroscopy confirm that hexagonal graphene domains, each measuring several microns, were synthesized on the silica islands.

源语言	英语
文章编号	023106
期刊	Applied Physics Letters
卷	109
期	2
DOI	https://doi.org/10.1063/1.4958872
出版状态	已出版 - 11 7月 2016
已对外发布	是

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title = "Copper vapor-assisted growth of hexagonal graphene domains on silica islands",

abstract = "Silica (SiO2) islands with a dendritic structure were prepared on polycrystalline copper foil, using silane (SiH4) as a precursor, by annealing at high temperature. Assisted by copper vapor from bare sections of the foil, single-layer hexagonal graphene domains were grown directly on the SiO2 islands by chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, Raman spectra, and X-ray photoelectron spectroscopy confirm that hexagonal graphene domains, each measuring several microns, were synthesized on the silica islands.",

author = "Jun Li and Chengmin Shen and Yande Que and Yuan Tian and Lili Jiang and Deliang Bao and Yeliang Wang and Shixuan Du and Gao, \{Hong Jun\}",

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doi = "10.1063/1.4958872",

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T1 - Copper vapor-assisted growth of hexagonal graphene domains on silica islands

AU - Li, Jun

AU - Shen, Chengmin

AU - Que, Yande

AU - Tian, Yuan

AU - Jiang, Lili

AU - Bao, Deliang

AU - Wang, Yeliang

AU - Du, Shixuan

AU - Gao, Hong Jun

PY - 2016/7/11

Y1 - 2016/7/11

N2 - Silica (SiO2) islands with a dendritic structure were prepared on polycrystalline copper foil, using silane (SiH4) as a precursor, by annealing at high temperature. Assisted by copper vapor from bare sections of the foil, single-layer hexagonal graphene domains were grown directly on the SiO2 islands by chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, Raman spectra, and X-ray photoelectron spectroscopy confirm that hexagonal graphene domains, each measuring several microns, were synthesized on the silica islands.

AB - Silica (SiO2) islands with a dendritic structure were prepared on polycrystalline copper foil, using silane (SiH4) as a precursor, by annealing at high temperature. Assisted by copper vapor from bare sections of the foil, single-layer hexagonal graphene domains were grown directly on the SiO2 islands by chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, Raman spectra, and X-ray photoelectron spectroscopy confirm that hexagonal graphene domains, each measuring several microns, were synthesized on the silica islands.

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VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023106

ER -

Copper vapor-assisted growth of hexagonal graphene domains on silica islands

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