Comprehensively optimized diagram in (Ga,In) (As,Sb) reciprocal system

The expressions of the composition space and the dependent properties of the lattice constant, the energy band gap and the Gibbs energy were presented for the (Ga,In) (As,Sb) quaternary compound semiconductor. On the basis of these expressions, a computer aided analysis system is set up for the design of III-V compound semiconductor materials and growth processes. By using this system, a comprehensively optimized diagram is constructed through the projection of the optoelectronic properties (energy band gap or wave length), in which the composition relations are matched to substrates and the miscibility gaps.