TY - JOUR
T1 - Comparative study on transport properties and scattering mechanism of group III doped SiC nanotube
AU - Gong, Pei
AU - Li, Yan Jing
AU - Jia, Ya Hui
AU - Li, Ya Lin
AU - Li, Shu Long
AU - Fang, Xiao Yong
AU - Cao, Mao Sheng
N1 - Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2018/9/7
Y1 - 2018/9/7
N2 - The third group of elements is the acceptor of P-type silicon carbide (SiC). Therefore, studying the transport properties of group III doped SiC nanotube (SiCNTs) and revealing the carrier scattering mechanism have important scientific significance for improving the photoelectric properties and promoting the development of SiC nano-devices. In this article, the lattice structure and transport properties of IIIA-doped SiCNTs are investigated systematically using density functional theory. According to the first principle data, we calculate the temperature characteristics of the conductivity, carrier concentration, and mobility, then, analyze the contributions of optical phonon, ionized impurity, neutral impurity and inter-carrier scattering to the mobility. The calculation results show that the conductivity of IIIA-doped SiCNTs decreased with increasing temperature in the temperature range below 200 K, above 200 K, the conductivity increases with increasing temperature. The main scattering mechanisms are optical phonon scattering and neutral impurity scattering. In application, this results will help the selection of SiCNTs acceptor.
AB - The third group of elements is the acceptor of P-type silicon carbide (SiC). Therefore, studying the transport properties of group III doped SiC nanotube (SiCNTs) and revealing the carrier scattering mechanism have important scientific significance for improving the photoelectric properties and promoting the development of SiC nano-devices. In this article, the lattice structure and transport properties of IIIA-doped SiCNTs are investigated systematically using density functional theory. According to the first principle data, we calculate the temperature characteristics of the conductivity, carrier concentration, and mobility, then, analyze the contributions of optical phonon, ionized impurity, neutral impurity and inter-carrier scattering to the mobility. The calculation results show that the conductivity of IIIA-doped SiCNTs decreased with increasing temperature in the temperature range below 200 K, above 200 K, the conductivity increases with increasing temperature. The main scattering mechanisms are optical phonon scattering and neutral impurity scattering. In application, this results will help the selection of SiCNTs acceptor.
KW - Group III doped
KW - Scattering mechanism
KW - SiC nanotube
KW - Transport properties
UR - https://www.scopus.com/pages/publications/85048504523
U2 - 10.1016/j.physleta.2018.06.006
DO - 10.1016/j.physleta.2018.06.006
M3 - Article
AN - SCOPUS:85048504523
SN - 0375-9601
VL - 382
SP - 2484
EP - 2488
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
IS - 35
ER -