Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

Pengfei Tian; Jonathan J.D. McKendry; Zheng Gong; Shuailong Zhang; Scott Watson; Dandan Zhu; Ian M. Watson; Erdan Gu; Anthony E. Kelly; Colin J. Humphreys; Martin D. Dawson

doi:10.1109/IPCon.2013.6656387

Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

Pengfei Tian
, Jonathan J.D. McKendry
, Zheng Gong^*
, Shuailong Zhang
, Scott Watson
, Dandan Zhu
, Ian M. Watson
, Erdan Gu
, Anthony E. Kelly
, Colin J. Humphreys
, Martin D. Dawson

^*此作品的通讯作者

University of Strathclyde
University of Glasgow
University of Cambridge

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.

源语言	英语
主期刊名	2013 IEEE Photonics Conference, IPC 2013
页	97-98
页数	2
DOI	https://doi.org/10.1109/IPCon.2013.6656387
出版状态	已出版 - 2013
已对外发布	是
活动	2013 26th IEEE Photonics Conference, IPC 2013 - Bellevue, WA, 美国期限: 8 9月 2013 → 12 9月 2013

出版系列

姓名	2013 IEEE Photonics Conference, IPC 2013

会议

会议	2013 26th IEEE Photonics Conference, IPC 2013
国家/地区	美国
市	Bellevue, WA
时期	8/09/13 → 12/09/13

访问文件

10.1109/IPCon.2013.6656387

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引用此

Tian, P., McKendry, J. J. D., Gong, Z., Zhang, S., Watson, S., Zhu, D., Watson, I. M., Gu, E., Kelly, A. E., Humphreys, C. J., & Dawson, M. D. (2013). Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. 在 2013 IEEE Photonics Conference, IPC 2013 (页码 97-98). 文章 6656387 (2013 IEEE Photonics Conference, IPC 2013). https://doi.org/10.1109/IPCon.2013.6656387

@inproceedings{26bd051fa1b74ab88caa7f34b069a147,

title = "Characteristics and applications of InGaN micro-light emitting diodes on Si substrates",

abstract = "InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.",

keywords = "GaN, Si, bandwidth, micro-LEDs",

author = "Pengfei Tian and McKendry, \{Jonathan J.D.\} and Zheng Gong and Shuailong Zhang and Scott Watson and Dandan Zhu and Watson, \{Ian M.\} and Erdan Gu and Kelly, \{Anthony E.\} and Humphreys, \{Colin J.\} and Dawson, \{Martin D.\}",

year = "2013",

doi = "10.1109/IPCon.2013.6656387",

language = "English",

isbn = "9781457715075",

series = "2013 IEEE Photonics Conference, IPC 2013",

pages = "97--98",

booktitle = "2013 IEEE Photonics Conference, IPC 2013",

note = "2013 26th IEEE Photonics Conference, IPC 2013 ; Conference date: 08-09-2013 Through 12-09-2013",

}

Tian, P, McKendry, JJD, Gong, Z, Zhang, S, Watson, S, Zhu, D, Watson, IM, Gu, E, Kelly, AE, Humphreys, CJ & Dawson, MD 2013, Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. 在 2013 IEEE Photonics Conference, IPC 2013., 6656387, 2013 IEEE Photonics Conference, IPC 2013, 页码 97-98, 2013 26th IEEE Photonics Conference, IPC 2013, Bellevue, WA, 美国, 8/09/13. https://doi.org/10.1109/IPCon.2013.6656387

TY - GEN

T1 - Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

AU - Tian, Pengfei

AU - McKendry, Jonathan J.D.

AU - Gong, Zheng

AU - Zhang, Shuailong

AU - Watson, Scott

AU - Zhu, Dandan

AU - Watson, Ian M.

AU - Gu, Erdan

AU - Kelly, Anthony E.

AU - Humphreys, Colin J.

AU - Dawson, Martin D.

PY - 2013

Y1 - 2013

N2 - InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.

AB - InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.

KW - GaN

KW - Si

KW - bandwidth

KW - micro-LEDs

UR - https://www.scopus.com/pages/publications/84892692834

U2 - 10.1109/IPCon.2013.6656387

DO - 10.1109/IPCon.2013.6656387

M3 - Conference contribution

AN - SCOPUS:84892692834

SN - 9781457715075

T3 - 2013 IEEE Photonics Conference, IPC 2013

SP - 97

EP - 98

BT - 2013 IEEE Photonics Conference, IPC 2013

T2 - 2013 26th IEEE Photonics Conference, IPC 2013

Y2 - 8 September 2013 through 12 September 2013

ER -

Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

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