@inproceedings{07b10026966245bfbdb8b49f0f084b5c,
title = "Atomistic simulations of structural relaxation process in amorphous silicon carbide",
abstract = "In order to elucidate the structural relaxation of a-SiC, we performed molecular dynamics simulation of the annealing process in a-SiC with different quench rates. The microstructures before and after annealing were examined and compared, in terms of both chemical and topological order. Our results revealed that chemical order was distinctively improved, along with some considerable modification occurred in the topological order, within both short range and medium range. A strong correlation between chemical and topological order was clarified.",
keywords = "Amorphous, Annealing rates, Silicon Carbide, Structural relaxation",
author = "K. Xue and Niu, \{L. S.\} and Shi, \{H. J.\} and Abdilaziz, \{M. Na{\"i}t\}",
year = "2008",
language = "English",
isbn = "9781932078800",
series = "Advances in Heterogeneous Material Mechanics 2008 - Proceedings of the 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008",
pages = "1498--1501",
booktitle = "Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008",
note = "Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008 ; Conference date: 03-06-2008 Through 08-06-2008",
}