TY - JOUR
T1 - Atomically engineering interlayer symmetry operations of two-dimensional crystals
AU - Han, Ziyi
AU - Wu, Shengqiang
AU - Huang, Chun
AU - Xuan, Fengyuan
AU - Han, Xiaocang
AU - Long, Yinfeng
AU - Zhang, Qing
AU - Li, Junxian
AU - Meng, Yuan
AU - Wang, Lin
AU - Zhou, Jiahuan
AU - Hu, Wenping
AU - Qiao, Jingsi
AU - Geng, Dechao
AU - Zhao, Xiaoxu
N1 - Publisher Copyright:
© The Author(s) 2024.
PY - 2024/12
Y1 - 2024/12
N2 - Crystal symmetry, which governs the local atomic coordination and bonding environment, is one of the paramount constituents that intrinsically dictate materials’ functionalities. However, engineering crystal symmetry is not straightforward due to the isotropically strong covalent/ionic bonds in crystals. Layered two-dimensional materials offer an ideal platform for crystal engineering because of the ease of interlayer symmetry operations. However, controlling the crystal symmetry remains challenging due to the ease of gliding perpendicular to the Z direction. Herein, we proposed a substrate-guided growth mechanism to atomically fabricate AB′-stacked SnSe2 superlattices, containing alternating SnSe2 slabs with periodic interlayer mirror and gliding symmetry operations, by chemical vapor deposition. Some higher-order phases such as 6 R, 12 R, and 18 C can be accessed, exhibiting modulated nonlinear optical responses suggested by first-principle calculations. Charge transfer from mica substrates stabilizes the high-order SnSe2 phases. Our approach shows a promising strategy for realizing topological phases via stackingtronics.
AB - Crystal symmetry, which governs the local atomic coordination and bonding environment, is one of the paramount constituents that intrinsically dictate materials’ functionalities. However, engineering crystal symmetry is not straightforward due to the isotropically strong covalent/ionic bonds in crystals. Layered two-dimensional materials offer an ideal platform for crystal engineering because of the ease of interlayer symmetry operations. However, controlling the crystal symmetry remains challenging due to the ease of gliding perpendicular to the Z direction. Herein, we proposed a substrate-guided growth mechanism to atomically fabricate AB′-stacked SnSe2 superlattices, containing alternating SnSe2 slabs with periodic interlayer mirror and gliding symmetry operations, by chemical vapor deposition. Some higher-order phases such as 6 R, 12 R, and 18 C can be accessed, exhibiting modulated nonlinear optical responses suggested by first-principle calculations. Charge transfer from mica substrates stabilizes the high-order SnSe2 phases. Our approach shows a promising strategy for realizing topological phases via stackingtronics.
UR - http://www.scopus.com/inward/record.url?scp=85213694342&partnerID=8YFLogxK
U2 - 10.1038/s41467-024-55130-z
DO - 10.1038/s41467-024-55130-z
M3 - Article
C2 - 39738030
AN - SCOPUS:85213694342
SN - 2041-1723
VL - 15
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 10835
ER -