Application of femtosecond mode-locked SnTe thin films and generation of bound-state solitons

In the realm of ultrafast laser technology, the exploration of two-dimensional materials as saturable absorbers (SA) has garnered significant research interest. Our research investigates the characteristics of SnTe thin films, a topological crystalline insulator material, as a potential saturable absorber for ultrafast lasers. Using the molecular beam epitaxy (MBE) technique, we analyze the films’ morphology and composition through atomic force microscopy (AFM) and successfully deposit SnTe epilayers on Au(111)/mica substrates. Through the utilization of SnTe-SA, an erbium-doped fiber laser is fabricated, demonstrating a pulse output with a width of 276 fs and a center wavelength of 1560 nm, highlighting the potential of SnTe films in manufacturing ultrafast optical devices. Additionally, tightly bound solitons with a soliton interval of 1.01 ps are observed, contributing to the exploration of soliton nonlinear dynamics.