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Antiferromagnetic interlayer exchange coupling between Fe3 O4 layers across a nonmagnetic MgO dielectric layer

  • Han Chun Wu*
  • , S. K. Arora
  • , O. N. Mryasov
  • , I. V. Shvets
  • *此作品的通讯作者
  • Trinity College Dublin
  • Seagate Technology

科研成果: 期刊稿件文章同行评审

摘要

We have investigated the interlayer exchange coupling between the epitaxial spinel Fe3 O4 layers across an insulating nonmagnetic MgO spacer. The epitaxial structure used for these investigations was Fe3 O4 (10 nm) MgO (0.8-3 nm) Fe3 O4 (10 nm) NiO (15 nm) multilayers grown on MgO (100) substrates. We find that the two Fe3 O4 layers are antiferromagnetic coupled through the MgO spacer when the MgO thickness is less than 1.5 nm. Furthermore, ab initio calculation of IEC for FeMgOFe indicates the importance of electrode states, in particular, partial oxidation of the ferromagnetic electrodes.

源语言英语
期刊论文编号182502
期刊Applied Physics Letters
92
18
DOI
出版状态已出版 - 2008
已对外发布

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