An UWB low noise amplifier in 0.13 μm CMOS

Aiming at the design of radio frequency (RF) front-end of the ultra-wideband (UWB) system with the signal frequency band of 3.1~10.6 GHz, a low noise amplifier (LNA) based on 0.13 μm CMOS technology was presented. With cascading the first stage with single-ended resistor feedback architecture and the second stage of single-to-differential voltage buffer, the proposed LNA obtained large power gain and simultaneously realized input impedance matching in the whole ultra wideband. The simulation results show a 23.2 dB voltage gain and input return loss below -13 dB from 3.1~10.6 GHz, 2.4 dB and 2.7 dB minimum and maximum noise figure (NF), and -11.9 dBm IIP3 at 6 GHz are achieved. With 1.2 V supply voltage, the wideband LNA consumes 12.2 mW. The silicon area is 0.32 mm².