An Ultra-Compact 84.9-107GHz LNA with 4.9dB NF by Utilizing Coupled-line-based Gm-Boosting and Noise-Canceling Techniques in 65-nm CMOS Technology

Imaging and communication systems operating at W-band can leverage the wide available bandwidths to achieve high-resolution imaging and multi-Gb/s communication [1]-[4]. A low-noise amplifier (LNA) determines the receiver (RX) noise Figure (NF) and is an indispensable component in high sensitivity RX. To minimize the NF of a fully integrated RX and to compensate for the low conversion gain and high noise of the following modules across a wide bandwidth, a broadband LNA with high gain and low NF is required. In addition, CMOS RXs are typically driven by discrete III-V LNAs to achieve higher system sensitivity [5]. Therefore, the CMOS LNA should also features good linearity to ensure more flexible system configuration and compact chip area to ensure low system cost.