An Electrical Thermal Co-transmission (ETC) TSV Interconnect with Annular Cu Conductor and CNT Core for Improving the Thermal Management of Heterogeneous Chiplet Integration

The heterogeneous integration (HI) of chiplets with various functionalities is an effective approach for realizing "More than Moore". However, thermal management presents a significant challenge for high-density integrated systems, especially those containing high-performance and high-power chiplets. In this work, we demonstrate a novel electrical thermal co-transmission (ETC) TSV structure featuring an annular Cu conductor and central CNT core, which not only serves as a vertical electrical interconnect but also provides enhanced heat dissipation between layers. The ETC TSVs are fabricated through a simplified process flow based on double-sided processes. Benefiting from the thick parylene liner, the TSVs exhibit excellent electrical performance characterized by low and stable parasitic capacitance, low leakage current, and low resistance. Furthermore, heat conduction measurements verify the capability of the ETC TSVs to enhance heat dissipation, thereby validating their effectiveness in improving the thermal management of high-density integrated systems.