An 8 mm band low noise amplifier using current reuse technique

Yuan Zheng; Jian Wu; Xuan Ai; Feng Qian; Xinyu Chen; Lei Yang

An 8 mm band low noise amplifier using current reuse technique

Yuan Zheng^*
, Jian Wu
, Xuan Ai
, Feng Qian
, Xinyu Chen
, Lei Yang

^*此作品的通讯作者

Nanjing Guobo Electronics Co., Ltd
Nanjing Electronic Devices Institute

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

An 8 mm band low noise amplifier was designed by using current reuse technique and fabricated with 0.15 μm PHEMT process. The chip dimension is 1.73 mm×0.75 mm×0.1 mm. The measured results from 32~38 GHz show a gain more than 21 dB, noise figure less than 1.85 dB, VSWR less than 2.5 and P_1dB more than 7 dBm. The total power consumption with this technique is 5 V and 28 mA, which is about 40% lower than that of the traditional design.

源语言	英语
页（从-至）	124-129+174
期刊	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
卷	33
期	2
出版状态	已出版 - 4月 2013
已对外发布	是

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title = "An 8 mm band low noise amplifier using current reuse technique",

abstract = "An 8 mm band low noise amplifier was designed by using current reuse technique and fabricated with 0.15 μm PHEMT process. The chip dimension is 1.73 mm{\texttimes}0.75 mm{\texttimes}0.1 mm. The measured results from 32\textasciitilde{}38 GHz show a gain more than 21 dB, noise figure less than 1.85 dB, VSWR less than 2.5 and P1dB more than 7 dBm. The total power consumption with this technique is 5 V and 28 mA, which is about 40\% lower than that of the traditional design.",

keywords = "GaAs, Low noise amplifier, MMIC, PHEMT",

author = "Yuan Zheng and Jian Wu and Xuan Ai and Feng Qian and Xinyu Chen and Lei Yang",

year = "2013",

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T1 - An 8 mm band low noise amplifier using current reuse technique

AU - Zheng, Yuan

AU - Wu, Jian

AU - Ai, Xuan

AU - Qian, Feng

AU - Chen, Xinyu

AU - Yang, Lei

PY - 2013/4

Y1 - 2013/4

N2 - An 8 mm band low noise amplifier was designed by using current reuse technique and fabricated with 0.15 μm PHEMT process. The chip dimension is 1.73 mm×0.75 mm×0.1 mm. The measured results from 32~38 GHz show a gain more than 21 dB, noise figure less than 1.85 dB, VSWR less than 2.5 and P1dB more than 7 dBm. The total power consumption with this technique is 5 V and 28 mA, which is about 40% lower than that of the traditional design.

AB - An 8 mm band low noise amplifier was designed by using current reuse technique and fabricated with 0.15 μm PHEMT process. The chip dimension is 1.73 mm×0.75 mm×0.1 mm. The measured results from 32~38 GHz show a gain more than 21 dB, noise figure less than 1.85 dB, VSWR less than 2.5 and P1dB more than 7 dBm. The total power consumption with this technique is 5 V and 28 mA, which is about 40% lower than that of the traditional design.

KW - GaAs

KW - Low noise amplifier

KW - MMIC

KW - PHEMT

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JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

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An 8 mm band low noise amplifier using current reuse technique

摘要

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