TY - JOUR
T1 - Active-matrix GaN micro light-emitting diode display with unprecedented brightness
AU - Herrnsdorf, Johannes
AU - McKendry, Jonathan J.D.
AU - Zhang, Shuailong
AU - Xie, Enyuan
AU - Ferreira, Ricardo
AU - Massoubre, David
AU - Zuhdi, Ahmad Mahmood
AU - Henderson, Robert K.
AU - Underwood, Ian
AU - Watson, Scott
AU - Kelly, Anthony E.
AU - Gu, Erdan
AU - Dawson, Martin D.
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2.
AB - Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2.
KW - CMOS integrated circuits
KW - Light-emitting diodes (LEDs)
KW - displays
KW - flip-chip devices
KW - integrated optoelectronics
UR - https://www.scopus.com/pages/publications/85027954264
U2 - 10.1109/TED.2015.2416915
DO - 10.1109/TED.2015.2416915
M3 - Article
AN - SCOPUS:85027954264
SN - 0018-9383
VL - 62
SP - 1918
EP - 1925
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
M1 - 7084141
ER -