摘要
Developing nonlinear optical nanodevices compatible for the current silicon chip industry is of great interest. Modified silicene, with its single atomic silicon thickness, has become a rising material. Here, on the basis of first-principle calculations, two-dimensional halogen and hydrogen saturated silicene are proposed to be competing candidates for strong second-harmonic generation (SHG) material workings in the mid-IR range. The SHG coefficient is more than 10 times larger than KH2PO4 (KDP) with high electron cloud deformability around halogen atoms. Also the Si-H absorption peak is within the range of 2102-2140 cm-1 (4673-4757 nm), red-shifted compared to 3300 cm-1 (3030 nm) of C-H in graphane. In addition, the two-dimensional material construction method can be extended to other novel two-dimensional single-element materials, including borophene, phosphorene, germanene, arsenene, antimonene, and bismuthene.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 27139-27146 |
| 页数 | 8 |
| 期刊 | Journal of Physical Chemistry C |
| 卷 | 121 |
| 期 | 48 |
| DOI | |
| 出版状态 | 已出版 - 7 12月 2017 |
| 已对外发布 | 是 |
学术指纹
探究 'Absorption and Mid-IR SHG in Two-Dimensional Halogen and Hydrogen Saturated Silicene Series' 的科研主题。它们共同构成独一无二的学术指纹。引用此
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver