@inproceedings{b98af31004cf4fcca6490e15c7bdd39f,
title = "A RF-DAC based 40 Gbps PAM Modulator with 1.2 pJ/bit Energy Efficiency at Millimeterwave Band",
abstract = "A PAM-4 modulator is designed and fabricated in a 0.25μ m indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The modulator is verified to have a 3-dB bandwidth of 60-90 GHz and a peak output power of -5 dBm at 75 GHz. This modulator can support 40 Gbps data transmission with a bit error rate of 3.7 × 10 -6, the energy efficiency is better than 1.2 pJ/bit. This modulator is suitable for application such as low power, short range, ultra high data rate wireless communication.",
keywords = "DHBT, energy efficiency, InP, internet of things, Modulator, pulse amplitude modulation, RF-DAC, wide-band",
author = "Frida Strombeck and He, \{Zhongxia Simon\} and Herbert Zirath",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 ; Conference date: 10-06-2018 Through 15-06-2018",
year = "2018",
month = aug,
day = "17",
doi = "10.1109/MWSYM.2018.8439488",
language = "English",
isbn = "9781538650677",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "931--933",
booktitle = "Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018",
address = "United States",
}