A Novel Power Device: 4H-SiC Junction Gate Bipolar Transistor (JGBT) With Excellent Static Performance

Due to the existence of defects in gate oxide layer of 4H-SiC MOSFET, the further improvement of the breakdown voltage and reduction of on-resistance is difficult. The 4H-SiC JFET relies on the PN junction to pinch off the channel to bear the high electric field so that it is difficult to achieve high Baliga's figure of merit (BFOM). In this paper, a novel 4H-SiC power switching device called junction gate bipolar transistor (JGBT) is proposed, which does not require gate oxide layer and effectively reduces on-resistance while achieving high breakdown voltage. The TCAD simulation analysis and optimization show that the 4HSiC JGBT has an excellent breakdown voltage (BV) of 1443 V and ultra-low specific on-resistance (Ron,sp) of 0.94 mΩcm2. The BFOM reaches an astonishing 2215 MW/cm2, which increased by at least 23% when comparing with other devices in the literatures.