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A highly efficient SDRAM controller supporting variable-length burst access and batch process for discrete reads

  • Beijing Institute of Technology

科研成果: 期刊稿件文章同行评审

摘要

A highly efficient Synchronous Dynamic Random Access Memory (SDRAM) controller supporting variable-length burst access and batch process for discrete reads is proposed in this paper. Based on the Principle of Locality, command First In First Out (FIFO) and address range detector are designed within this controller to accelerate its responses to discrete read requests, which dramatically improves the average Effective Bus Utilization Ratio (EBUR) of SDRAM. Our controller is finally verified by driving the Micron 256-Mb SDRAM MT48LC16M16A2. Successful simulation and verification results show that our controller exhibits much higher EBUR than do most existing designs in case of discrete reads.

源语言英语
页(从-至)406-423
页数18
期刊International Journal of Electronics
103
3
DOI
出版状态已出版 - 3 3月 2016

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